Surface Modifications Used to Create a Universal Approach of Modeling Diodes

Abstract

To better understand and test current theories of charge transfer across inorganic semiconductor I conjugated polymer interfaces, the work in the Lonergan Labs has shown a correlation between the capacitance-voltage (C-V) and the current-voltage (1-V) characteristics of n-InP I poly (pyrrole) interfaces. Analytical expressions explaining the barrier height have been determined using a novel approach to evaluate the barrier height and model for tunable diodes. The most common anomalies are discrepancies between the interfacial potential barrier heights determined by various techniques. In the past, device behavior is not always reproducible. But, using a thin polyimide film of ~ +3.0 µm can consistently reproduce the past data needed to further expand upon "Moore's Laws." Through this use of chemical surface modifications to control electron transfer at inorganic semiconductor interfaces (IS), a general platform for testing electronic processes at these (IS) interfaces will help to re-engineer conventional microelectronic devices .